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| Datasheet File OCR Text: |
| Gunter Semiconductor GmbH Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175 Operating Temperature * Fast Switching * Fully Avalanche Rated * Extremely low Rds(on) Mechanical Data: D24 4.32mm x 6.10mm Dimension 400 m Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 20 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25 GFC048 N Channel Power MOSFET with extremely low RDS(on) Symbol V(BR)DSS RDS(ON) ID@25 ID@100 Tj Limit Unit Test Conditions VGS=0V, ID=250 VGS=10V, ID=32 VGS=10V VGS=10V 60 0.018 53 37 -55~175 -55~175 V A A TSTR Target Device: IRFZ48 TO-263AB Pd Pd 3.8 94 W W @Ta=25 @Tc=25 |
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